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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4
BTD882SA3
Features
* Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A * Excellent current gain characteristics * Complementary to BTB772SA3
Symbol
BTD882SA3
Outline
TO-92
BBase CCollector EEmitter
ECB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw350s,Duty2%.
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg
Limit 60 50 5 3 (Note) 7 750 150 -55~+150
Unit V V V A A mW C C
BTD882SA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 52 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 500 Unit V V V A A V V MHz pF
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=50V. IE=0 VEB=3V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE2
Rank Range Q 100~200 P 160~320 E 250~500
BTD882SA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 3/4
Saturation voltage vs Collector current
1000
VCE(sat)
Saturation voltage---(mV)
Current gain---HFE
100
IC=40IB
100
VCE=2V VCE=1V
10
IC=10IB IC=20IB
10 1 10 100 1000 Collector current---IC(mA) 10000
1 1 10 100 1000 Collector current---IC(mA) 10000
Saturation votlage vs Collector current
10000 Power Dissipation---PD(mW)
VBE(sat)@IC=10IB
Power Derating Curve 800 700 600 500 400 300 200 100 0 0 50 100 150 200
Saturation voltage---(mV)
1000
100 1 10 100 1000 10000 Collector current---IC(mA)
Ambient Temperature --- Ta( )
BTD882SA3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
2
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 4/4
A B
1 2 3
Marking:
D882S
3
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD882SA3
CYStek Product Specification

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